SiC Power Components Market Size, Competitor Ranking Analysis, Market Trend Forecast Report 2025-2031
2025年 11月 21日(金曜日) 12:09
Global Info Research‘s report offers an in-depth look into the current and future trends in SiC Power Components, making it an invaluable resource for businesses involved in the sector. This data will help companies make informed decisions on research and development, product design, and marketing strategies. It also provides insights into SiC Power Components’ cost structure, raw material sources, and production processes. Additionally, it offers an understanding of the regulations and policies that are likely to shape the future of the industry. In essence, our report can help you stay ahead of the curve and better capitalize on industry trends.
According to our (Global Info Research) latest study, the global SiC Power Components market size was valued at US$ 5013 million in 2024 and is forecast to a readjusted size of USD 18449 million by 2031 with a CAGR of 20.1% during review period.
In this report, we will assess the current U.S. tariff framework alongside international policy adaptations, analyzing their effects on competitive market structures, regional economic dynamics, and supply chain resilience.
This report studies the SiC Power Components, which include SiC MOSFET Modules, SiC MOSFET Discretes, SiC SBD (Diode), and Others (SiC JFETs & FETs).
Silicon carbide MOSFETs have the characteristics of low on-resistance and small switching losses, which can reduce device losses and improve system efficiency, and are more suitable for high-frequency circuits. It is widely used in the fields of new energy vehicle motor controller, vehicle power supply, solar inverter, charging pile, UPS, PFC power supply and other fields.
A silicon carbide (SiC) schottky diode is a semiconductor diode formed by the junction of a semiconductor with a metal. SiC Schottky barrier diodes have a much lower reverse leakage current than their Si counterparts and also a higher forward voltage. They significantly reduce losses and can therefore be used to increase system efficiency and reduce product size.
The SiC ecosystem (value chain) spans upstream raw-material and substrate suppliers (bulk SiC crystal growers and wafer makers), epitaxial (epi) wafer manufacturers, device fabs (front-end processing), power-module and packaging specialists, test & qualification services, and downstream system integrators/OEMs (automotive Tier-1s, inverter makers, datacenter PSU vendors). Upstream concentration and capacity (substrates/epi) are strategic bottlenecks that determine cost and yield; midstream device makers add process IP (implantation, gate technology, trench or planar MOS structures) and qualification for automotive AEC-Q/TS standards; downstream players drive integration into modules and cooling/thermal management solutions. Leading device suppliers include STMicroelectronics, Infineon, Wolfspeed (Cree), ROHM, onsemi, Toshiba/Mitsubishi and several Chinese and Japanese challengers—competition has intensified as these players scale 150–200 mm wafer flows and pursue module partnerships. Industry developments to watch: widescale migration to 200 mm SiC manufacturing to lower unit cost (major vendors announced 200 mm roadmaps), consolidation and verticalization (some substrate and epi play acquisitions/alliances), push for higher reliability and automotive qualification, and system-level optimization (SiC + Si hybrid topologies, smarter packaging and cooling). Market forecasts show multi-year double-digit CAGR as SiC penetration grows in EV traction and renewables, even as supply and short-term demand cycles create volatility for specific producers.
This report is a detailed and comprehensive analysis for global SiC Power Components market. Both quantitative and qualitative analyses are presented by manufacturers, by region & country, by Type and by Application. As the market is constantly changing, this report explores the competition, supply and demand trends, as well as key factors that contribute to its changing demands across many markets. Company profiles and product examples of selected competitors, along with market share estimates of some of the selected leaders for the year 2025, are provided.
Our SiC Power Components Market report is a comprehensive study of the current state of the industry. It provides a thorough overview of the market landscape, covering factors such as market size, competitive landscape, key market trends, and opportunities for future growth. It also pinpoints the key players in the market, their strategies, and offerings.
Request PDF Sample Copy of Report: (Including Full TOC, List of Tables & Figures, Chart)
https://www.globalinforesearch.com/reports/2748423/sic-power-components
The research report encompasses the prevailing trends embraced by major manufacturers in the SiC Power Components Market, such as the adoption of innovative technologies, government investments in research and development, and a growing emphasis on sustainability. Moreover, our research team has furnished essential data to illuminate the manufacturer's role within the regional and global markets.
The research study includes profiles of leading companies operating in the SiC Power Components Market:
The report is structured into chapters, with an introductory executive summary providing historical and estimated global market figures. This section also highlights the segments and reasons behind their progression or decline during the forecast period. Our insightful SiC Power Components Market report incorporates Porter's five forces analysis and SWOT analysis to decipher the factors influencing consumer and supplier behavior.
Segmenting the SiC Power Components Market by application, type, service, technology, and region, each chapter offers an in-depth exploration of market nuances. This segment-based analysis provides readers with a closer look at market opportunities and threats while considering the political dynamics that may impact the market. Additionally, the report scrutinizes evolving regulatory scenarios to make precise investment projections, assesses the risks for new entrants, and gauges the intensity of competitive rivalry.
Major players covered: STMicroelectronics、 Infineon、 Wolfspeed、 Rohm、 onsemi、 BYD Semiconductor、 Microchip (Microsemi)、 Mitsubishi Electric (Vincotech)、 Semikron Danfoss、 Fuji Electric、 Navitas (GeneSiC)、 Toshiba、 San'an Optoelectronics、 Littelfuse、 CETC 55、 WeEn Semiconductors、 BASiC Semiconductor、 SemiQ、 Diodes Incorporated、 SanRex、 Alpha & Omega Semiconductor、 Bosch、 GE Aerospace、 KEC Corporation、 PANJIT Group、 Nexperia、 Vishay Intertechnology、 Zhuzhou CRRC Times Electric、 China Resources Microelectronics Limited、 StarPower、 Yangzhou Yangjie Electronic Technology、 Guangdong AccoPower Semiconductor、 Changzhou Galaxy Century Microelectronics、 Hangzhou Silan Microelectronics、 Cissoid、 Hebei Sinopack Electronic Technology、 PN Junction Semiconductor (Hangzhou)、 United Nova Technology、 InventChip Technology、 Leadrive Technology、 HAIMOSIC (SHANGHAI)、 Suzhou Sko Semiconductor、 Shenzhen Aishite Technology、 Suzhou Xizhi Technology、 Archimedes Semiconductor (Hefei)、 Grecon Semiconductor (Shanghai)
SiC Power Components Market by Type: SiC MOSFET Module、 SiC MOSFET Discrete、 SiC SBD、 Others (SiC JFETs & FETs)
SiC Power Components Market by Application: Automotive & EV/HEV、 EV Charging、 Industrial Motor/Drive、 PV, Energy Storage, Wind Power、 UPS, Data Center & Server、 Rail Transport、 Others
Key Profits for Industry Members and Stakeholders:
1. The report includes a plethora of information such as market dynamics scenario and opportunities during the forecast period.
2. Which regulatory trends at corporate-level, business-level, and functional-level strategies.
3. Which are the End-User technologies being used to capture new revenue streams in the near future.
4. The competitive landscape comprises share of key players, new developments, and strategies in the last three years.
5. One can increase a thorough grasp of market dynamics by looking at prices as well as the actions of producers and users.
6 Comprehensive companies offering products, relevant financial information, recent developments, SWOT analysis, and strategies by these players.
The content of the study subjects, includes a total of 15 chapters:
Chapter 1, to describe SiC Power Components product scope, market overview, market estimation caveats and base year.
Chapter 2, to profile the top manufacturers of SiC Power Components, with price, sales, revenue and global market share of SiC Power Components from 2020 to 2025.
Chapter 3, the SiC Power Components competitive situation, sales quantity, revenue and global market share of top manufacturers are analyzed emphatically by landscape contrast.
Chapter 4, the SiC Power Components breakdown data are shown at the regional level, to show the sales quantity, consumption value and growth by regions, from 2020 to 2031.
Chapter 5 and 6, to segment the sales by Type and application, with sales market share and growth rate by type, application, from 2020 to 2031.
Chapter 7, 8, 9, 10 and 11, to break the sales data at the country level, with sales quantity, consumption value and market share for key countries in the world, from 2020 to 2024.and SiC Power Components market forecast, by regions, type and application, with sales and revenue, from 2025 to 2031.
Chapter 12, market dynamics, drivers, restraints, trends and Porters Five Forces analysis.
Chapter 13, the key raw materials and key suppliers, and industry chain of SiC Power Components.
Chapter 14 and 15, to describe SiC Power Components sales channel, distributors, customers, research findings and conclusion.
About Us:
Global Info Research
Web: https://www.globalinforesearch.com
CN: 0086-176 6505 2062
HK: 00852-58030175
US: 001-347 966 1888
Email: report@globalinforesearch.com
Global Info Research is a company that digs deep into global industry information to support enterprises with market strategies and in-depth market development analysis reports. We provides market information consulting services in the global region to support enterprise strategic planning and official information reporting, and focuses on customized research, management consulting, IPO consulting, industry chain research, database and top industry services. At the same time, Global Info Research is also a report publisher, a customer and an interest-based suppliers, and is trusted by more than 30,000 companies around the world. We will always carry out all aspects of our business with excellent expertise and experience.
According to our (Global Info Research) latest study, the global SiC Power Components market size was valued at US$ 5013 million in 2024 and is forecast to a readjusted size of USD 18449 million by 2031 with a CAGR of 20.1% during review period.
In this report, we will assess the current U.S. tariff framework alongside international policy adaptations, analyzing their effects on competitive market structures, regional economic dynamics, and supply chain resilience.
This report studies the SiC Power Components, which include SiC MOSFET Modules, SiC MOSFET Discretes, SiC SBD (Diode), and Others (SiC JFETs & FETs).
Silicon carbide MOSFETs have the characteristics of low on-resistance and small switching losses, which can reduce device losses and improve system efficiency, and are more suitable for high-frequency circuits. It is widely used in the fields of new energy vehicle motor controller, vehicle power supply, solar inverter, charging pile, UPS, PFC power supply and other fields.
A silicon carbide (SiC) schottky diode is a semiconductor diode formed by the junction of a semiconductor with a metal. SiC Schottky barrier diodes have a much lower reverse leakage current than their Si counterparts and also a higher forward voltage. They significantly reduce losses and can therefore be used to increase system efficiency and reduce product size.
The SiC ecosystem (value chain) spans upstream raw-material and substrate suppliers (bulk SiC crystal growers and wafer makers), epitaxial (epi) wafer manufacturers, device fabs (front-end processing), power-module and packaging specialists, test & qualification services, and downstream system integrators/OEMs (automotive Tier-1s, inverter makers, datacenter PSU vendors). Upstream concentration and capacity (substrates/epi) are strategic bottlenecks that determine cost and yield; midstream device makers add process IP (implantation, gate technology, trench or planar MOS structures) and qualification for automotive AEC-Q/TS standards; downstream players drive integration into modules and cooling/thermal management solutions. Leading device suppliers include STMicroelectronics, Infineon, Wolfspeed (Cree), ROHM, onsemi, Toshiba/Mitsubishi and several Chinese and Japanese challengers—competition has intensified as these players scale 150–200 mm wafer flows and pursue module partnerships. Industry developments to watch: widescale migration to 200 mm SiC manufacturing to lower unit cost (major vendors announced 200 mm roadmaps), consolidation and verticalization (some substrate and epi play acquisitions/alliances), push for higher reliability and automotive qualification, and system-level optimization (SiC + Si hybrid topologies, smarter packaging and cooling). Market forecasts show multi-year double-digit CAGR as SiC penetration grows in EV traction and renewables, even as supply and short-term demand cycles create volatility for specific producers.
This report is a detailed and comprehensive analysis for global SiC Power Components market. Both quantitative and qualitative analyses are presented by manufacturers, by region & country, by Type and by Application. As the market is constantly changing, this report explores the competition, supply and demand trends, as well as key factors that contribute to its changing demands across many markets. Company profiles and product examples of selected competitors, along with market share estimates of some of the selected leaders for the year 2025, are provided.
Our SiC Power Components Market report is a comprehensive study of the current state of the industry. It provides a thorough overview of the market landscape, covering factors such as market size, competitive landscape, key market trends, and opportunities for future growth. It also pinpoints the key players in the market, their strategies, and offerings.
Request PDF Sample Copy of Report: (Including Full TOC, List of Tables & Figures, Chart)
https://www.globalinforesearch.com/reports/2748423/sic-power-components
The research report encompasses the prevailing trends embraced by major manufacturers in the SiC Power Components Market, such as the adoption of innovative technologies, government investments in research and development, and a growing emphasis on sustainability. Moreover, our research team has furnished essential data to illuminate the manufacturer's role within the regional and global markets.
The research study includes profiles of leading companies operating in the SiC Power Components Market:
The report is structured into chapters, with an introductory executive summary providing historical and estimated global market figures. This section also highlights the segments and reasons behind their progression or decline during the forecast period. Our insightful SiC Power Components Market report incorporates Porter's five forces analysis and SWOT analysis to decipher the factors influencing consumer and supplier behavior.
Segmenting the SiC Power Components Market by application, type, service, technology, and region, each chapter offers an in-depth exploration of market nuances. This segment-based analysis provides readers with a closer look at market opportunities and threats while considering the political dynamics that may impact the market. Additionally, the report scrutinizes evolving regulatory scenarios to make precise investment projections, assesses the risks for new entrants, and gauges the intensity of competitive rivalry.
Major players covered: STMicroelectronics、 Infineon、 Wolfspeed、 Rohm、 onsemi、 BYD Semiconductor、 Microchip (Microsemi)、 Mitsubishi Electric (Vincotech)、 Semikron Danfoss、 Fuji Electric、 Navitas (GeneSiC)、 Toshiba、 San'an Optoelectronics、 Littelfuse、 CETC 55、 WeEn Semiconductors、 BASiC Semiconductor、 SemiQ、 Diodes Incorporated、 SanRex、 Alpha & Omega Semiconductor、 Bosch、 GE Aerospace、 KEC Corporation、 PANJIT Group、 Nexperia、 Vishay Intertechnology、 Zhuzhou CRRC Times Electric、 China Resources Microelectronics Limited、 StarPower、 Yangzhou Yangjie Electronic Technology、 Guangdong AccoPower Semiconductor、 Changzhou Galaxy Century Microelectronics、 Hangzhou Silan Microelectronics、 Cissoid、 Hebei Sinopack Electronic Technology、 PN Junction Semiconductor (Hangzhou)、 United Nova Technology、 InventChip Technology、 Leadrive Technology、 HAIMOSIC (SHANGHAI)、 Suzhou Sko Semiconductor、 Shenzhen Aishite Technology、 Suzhou Xizhi Technology、 Archimedes Semiconductor (Hefei)、 Grecon Semiconductor (Shanghai)
SiC Power Components Market by Type: SiC MOSFET Module、 SiC MOSFET Discrete、 SiC SBD、 Others (SiC JFETs & FETs)
SiC Power Components Market by Application: Automotive & EV/HEV、 EV Charging、 Industrial Motor/Drive、 PV, Energy Storage, Wind Power、 UPS, Data Center & Server、 Rail Transport、 Others
Key Profits for Industry Members and Stakeholders:
1. The report includes a plethora of information such as market dynamics scenario and opportunities during the forecast period.
2. Which regulatory trends at corporate-level, business-level, and functional-level strategies.
3. Which are the End-User technologies being used to capture new revenue streams in the near future.
4. The competitive landscape comprises share of key players, new developments, and strategies in the last three years.
5. One can increase a thorough grasp of market dynamics by looking at prices as well as the actions of producers and users.
6 Comprehensive companies offering products, relevant financial information, recent developments, SWOT analysis, and strategies by these players.
The content of the study subjects, includes a total of 15 chapters:
Chapter 1, to describe SiC Power Components product scope, market overview, market estimation caveats and base year.
Chapter 2, to profile the top manufacturers of SiC Power Components, with price, sales, revenue and global market share of SiC Power Components from 2020 to 2025.
Chapter 3, the SiC Power Components competitive situation, sales quantity, revenue and global market share of top manufacturers are analyzed emphatically by landscape contrast.
Chapter 4, the SiC Power Components breakdown data are shown at the regional level, to show the sales quantity, consumption value and growth by regions, from 2020 to 2031.
Chapter 5 and 6, to segment the sales by Type and application, with sales market share and growth rate by type, application, from 2020 to 2031.
Chapter 7, 8, 9, 10 and 11, to break the sales data at the country level, with sales quantity, consumption value and market share for key countries in the world, from 2020 to 2024.and SiC Power Components market forecast, by regions, type and application, with sales and revenue, from 2025 to 2031.
Chapter 12, market dynamics, drivers, restraints, trends and Porters Five Forces analysis.
Chapter 13, the key raw materials and key suppliers, and industry chain of SiC Power Components.
Chapter 14 and 15, to describe SiC Power Components sales channel, distributors, customers, research findings and conclusion.
About Us:
Global Info Research
Web: https://www.globalinforesearch.com
CN: 0086-176 6505 2062
HK: 00852-58030175
US: 001-347 966 1888
Email: report@globalinforesearch.com
Global Info Research is a company that digs deep into global industry information to support enterprises with market strategies and in-depth market development analysis reports. We provides market information consulting services in the global region to support enterprise strategic planning and official information reporting, and focuses on customized research, management consulting, IPO consulting, industry chain research, database and top industry services. At the same time, Global Info Research is also a report publisher, a customer and an interest-based suppliers, and is trusted by more than 30,000 companies around the world. We will always carry out all aspects of our business with excellent expertise and experience.
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